Moreover, the presence of Ce ~ ( 3 + ) impurity causes the absorption band at 306 nm.
同时, 杂质离子 Ce3 +的存在也导致晶体出现306nm的吸收带.
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With the increasing deposition amount of Cu, the absorption band - edge red - shifts.
根据雷利散射引起的消光增强解释了组装体吸收带边红移的原因.
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The suitable ultraviolet absorption band is selected via experiment.
通过实验研究选定检测紫外吸收波长.
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As a single crystal ithas large emission cross, wide absorption band, low threshold, high thermoconductivity.
具有大的受激发射跃迁截面, 宽吸收带, 低激光发射振荡阈值, 高热传导率等特点.
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