To minimize channeling effects, the GaAs target should be misaligned from the axis of the beam.
为了使沟道效应最小, GaAs靶应稍偏离离子束的轴向.
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Pt - GaAs Schottky barrier APDs have been investigated.
Pt-GaAs肖特基势垒雪崩光电探测器已研制成功.
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The single - crystalline Ni film with the body - centered - cubic ( bcc ) structure are obtained epitaxially on GaAs ( 001 ) surface at 170 K.
在170K的生长温度下,通过分子束外延在GaAs ( 001 ) 表面生长得到体心立方结构金属Ni薄膜.
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The Raman scattering stndes of ( GaAs ) _ n ( AlAs ) _ n superlattioes at room bemperature and under off - resonanco conditions are reported.
报道了在室温和非共振条件下, ( GaAs ) _n ( AlAs ) _n超晶格结构的喇曼散射测量结果.
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The experiment of fully automatic reactive ion etching on 3 inch GaAs wafer is described.
介绍了全自动反应离子腐蚀3英寸GaAs片的实验研究工作.
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Epitaxial layers of InSb and InAs _ xSb _ ( 1 - x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique.
在 ( 111 ) InSb和 ( 100 ) GaAs衬底上,用分子束外延技术生长了InSb和InAs_xSb_ ( 1-x ) 外延层.
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Experiments are demonstrated on printed circuit board, LTCC, and monolithic GaAs substrate.
实验结果于印刷电路板 、 低温共烧陶瓷 、 与单晶砷化镓基板上实现.
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The design of C band GaAs MMIC low noise amplifier was described.
主要介绍了C波段低噪声单片放大器的设计方法和电路设计指标.
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The PVS spectra for GaAs 、 InP 、 InGaAs 、 InGaAsP etc. are reported in this paper.
本文介绍了InP、InGaAs、InGaP、InGaAsP等 的光压港(PVS).
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Refractive square based arch GaAs array was fabricated by a novel method, i.
提出了一种新的曲率补偿法用于长焦距微透镜阵列的制作.
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In this paper, a small Hall current sensor made from a GaAs Hall component is introduced.
介绍了一种利用砷化镓霍尔元件设计的微型霍尔电流传感器.
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A GaAs FET Oscillator stabilized by a dielectric resonator with a feedback loop has been developed.
本文介绍了一种环路反馈式场效应管介质稳频振荡器.
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This paper presented a MEMS microwave power sensor fabricated in GaAs MMIC technology.
提出了一种基于GaAsMMIC工艺的MEMS微波功率传感器.
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To obtain high quality semi - insulating GaAs wafers, it is necessary to decrease microscopic defect density.
为了获得高质量半绝缘砷化镓单晶片, 有必要降低微缺陷密度.
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Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent ( EL ) Diodes ( Abstract )
在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管 ( 摘要 )
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