Epitaxial layers of InSb and InAs _ xSb _ ( 1 - x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique.

在 ( 111 ) InSb和 ( 100 ) GaAs衬底上,用分子束外延技术生长了InSb和InAs_xSb_ ( 1-x ) 外延层.

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Inductively coupled plasma was first used to dry etch of InSb thin film.

应用感应耦合等离子体技术首次实现了对锑化铟薄膜的干法刻蚀.

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