Dopant distribution in LDD region is getting closer to substrate surface.

LDD区域中的杂质分布越来越靠近衬底表面.

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B word of caution: Using the LDD screen will slow down your picture taking ability.

警告的话: 施用LDD屏会侵害电池的寿命,并且会减低拍摄的能力.

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LDD ultra shallow junction can be reachec by low energy and high dose implant.

可以通过低能量,高剂量的等离子注入来实现LDD超浅结(ultrashallowjunction).

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The LDD MOSFET is a suitable structure for VLSI.

这些优点意味着LDDMOSFET结构在VLSI中 有着广泛的应用前景.

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The LDD dose change can be used to change working current with certain critical dimension.

它主要是调节在特征尺寸一定的情况下通过改变有效沟道尺寸来改变工作电流的大小.

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