A new type power MOSFET lower on - resistance and gate charge.

新型功率MOSFET——QFET带有低通态电阻和栅极电荷.

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Apply advanced reversing technology and imported MOSFET power switch.

采用先进的逆变技术和进口MOSFET功率开关器件.

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A depletion - mode MOSFET virtually eliminates power wasted in switcher's start - up circuitry.

在开关上电电路中,耗尽型MOSFET实质上消除了能量损耗.

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The PA 85 is a high voltage, high precision MOSFET operational amplifier.

PA85是一种高压 、 高精度的MOSFET运算放大器.

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Skilled with MOSFET device engineering, especially in its reliability and performance aspects.

具有MOSFET元件工程技能,其中, 尤其著重于可靠度及高效能方面.

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Introduce the principle of MOSFET AC square wave inverter power source.

介绍了MOSFET交流方波逆变电源的工作原理.

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TOPSwitch series integrated with PWM controller and voltage MOSFET has high performance and reliability.

芯片集PWM控制器和高压MOSFET于一体,性能优异,可靠性高.

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Familiar with PWM , PFM control chip, IGBT, MOSFET, high - frequency transformers and magnetic elements.

熟悉PWM、PFM控制芯片 、 IGBT, MOSFET等功率器件 、 高频变压器、电感等磁性元件.

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Ultimate analysis magnetic elements'characteristic, transformer, inductance design and MOSFET switch component's shaping.

最后分析了磁性元件的特性, 变压器, 电感的设计和MOSFET开关器件 的选型.

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The half - bridge inverter circuit is used IGBT as switch with the advantages of MOSFET and GTR.

主电路使用集MOSFET和GTR的 优点于一身的IGBT作为开关管,构成半桥逆变电路.

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To achieve this performance, it requires more from each MOSFET of the MOSFET small - cell component.

为达到这种性能, 它要求每个MOSFET由更多更小的MOSFET原胞组成.

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P - channel lateral MOSFET. High power 125 W. Drain - source voltage 250 V. Storage temperature range.

P沟道MOSFET的 外侧. 高功率125瓦特的漏源电压250V.储存温度范围.

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High frequency MOSFET integrated controller and SEM driving motor constitute advanced SEM walking control system.

高频MOSFET集成控制器和SEM驱动电机组成先进的SEM行走控制系绝.

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MOSFET more dominant direction is the direction to the development of very low internal resistance.

MOSFET的更为主导的方向是向极低内阻等方向发展.

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The main circuit is composed of uncontrolled rectifier and the single - phase bridge inverter using MOSFET.

该主电路采用不控整流,MOSFET单相全桥逆变电路.

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