The rooting effect of the structure in deep reactive ion etching ( DRIE ) process was investigated.

给出了加速度计的制作工艺流程,研究了解决深 反应离子刻蚀 过程中的过刻蚀现象的方法.

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The experiment of fully automatic reactive ion etching on 3 inch GaAs wafer is described.

介绍了全自动反应离子腐蚀3英寸GaAs片的实验研究工作.

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The waveguide device was fabricated by - coating films , using aluminum as mask and oxygen reactive ion etching.

我们采用旋涂 、 铝掩膜和氧反应离子刻蚀的方法(RIE)制得了聚合物阵列式光波导器件.

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