Silicon based germanium quantum - dot ( QD ) devices are highly focused for itscompatibility with mature VLSI processing technology.

其中硅基锗量子点器件因其制备工艺与成熟的大规模集成电路工艺的兼容性而更加受到人们的重视.

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In this Paper , the coherent transport characteristics of electrons tunneling through a quantum dot are investigated.

摘要研究了电子隧穿通过量子点的相干输运特性.

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