The tunneling characteristics of the semiconductor quantum well through a double - barrier potential model is studied.

用双势垒模型研究了半导体异质结量子阱的隧穿特性.

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The rate equations for multi - quantum well VCSELs are deduced theoretically and its output characteristics , i . e.

从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程.

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The temperature performance and stability of quantum - well super luminescent diode ( SLD ) are better of normal SLD.

量子阱结构超辐射发光二极管 ( SLD ) 具有良好的温度特性和一致性.

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But, there are few papers to study charged excitons in the GaAs quantum - well wires.

但对量子阱线中带电激子体系的研究很少,所以本文主要研究量子阱线中带电激子的性质.

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In the fifth chapter, we introduce a photonic quantum - well structure containing negative - index materials.

第五章, 介绍了一种含有负折射率材料的光子晶体量子阱结构.

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Modulators: Multiple quantum well structures, quantum confined Stark effect ; SEED. Waveguide couplers, switches , modulators.

光调变器: 多重量子井结构, 量子局限史托克效应, 自电光效应元件, 波导耦合器,光开关, 光调变器.

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