And double oxide - confining regions offer a method of decreasing threshold current and controlling high order modes.
同时双氧化限制层为VCSEL器件 提供了一种降低阈值,抑制高阶横模的方法.
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The relation of device parameter on threshold current and optimal well numbers have been discussed.
文中三种表述与阈值电流最小值对应的最佳阱数具有相同的表达式.
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