The design of C band GaAs MMIC low noise amplifier was described.

主要介绍了C波段低噪声单片放大器的设计方法和电路设计指标.

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This paper presents an analysis of open cavity of C - band MILO.

建立了C波段磁绝缘线振荡器开放腔模型,通过监测宽带激励源的响应计算出开放腔的谐振频率和有载品质因数.

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C band EDFA only uses 2.5 m of this EDF, and which realize high gain.

利用2.5m的高浓度掺铒光纤制作的C波段EDFA就实现了高增益.

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The better results are obtained for the C - band FET amplifier designed with measured s parametere.

用测出的s参数设计的C波段场效应晶体管放大器获得了初步良好的结果.

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The paper also suggests that reverse C - band could be used in developing HAPS's Chinese version.

建议利用反向C频段开发我国的平流层通信系统.

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