This paper focuses on modeling the effect of temperature and voltage for 0.13 mm CMOS device mismatch.
这篇论文以0.13mmCMOS器件的不匹配性为研究对象,主要模拟其温度和电压效应.
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To predict the circuit performance, HEMT and CMOS device models used in the designs are described.
为了准确预测电路的效能, 首先描述了HEMT及CMOS的元件模型.
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